features high output power: 34 dbm typ high linear gain: 8.5 db typ high efficiency: 30% typ input and output internally matched for optimum performance california eastern laboratories 3 w x-band internally matched power gaas mesfet NEZ1011-3E outline dimensions (units in mm) package outline x-17 8.25 0.15 9.7 0.13 2.74 0.1 r 0.65 13 0.1 16.5 0.13 1.8 0.1 9 0.3 0.2 max 3.0 0.2 0.5 0.07 gate source drain symbols parameters units min typ max v ds drain to source voltage v 10 10 10 t ch channel temperature c 130 g comp gain compression db 3 rg gate resistance 1 ? 100 200 200 recommended operating limits electrical characteristics (t a = 25 c) part number NEZ1011-3E symbols characteristics units min typ max test conditions p out(1db) output power at 1 db gain compression dbm 33.5 34.0 f = 10.7, 11.2, 11.7 ghz g l linear gain db 8.0 8.5 v ds = 10 v, i ds = 0.7 a (rf off) add(1db) power added efficiency % 30 rg = 200 ? i ds(1db) drain current at 1 db gain compression a 0.9 1.1 i dss saturated drain current a 0.7 1.6 2.5 v ds = 1.5 v, v gs = 0 v v p pinch-off voltage v -2.5 -1.3 -0.5 v ds = 2.5 v, i ds = 10 ma bv gd gate to drain breakdown voltage v 15 i gd = 10 ma r th thermal resistance ?c/w 5.5 7.0 channel to case the NEZ1011-3E is a power gaas fet which provides high gain, high efficiency and high output power in x-band. the internal input and output matching enables guaranteed per- formance to be achieved with only a 50 ? external circuit. to reduce thermal resistance, the device has a phs (plated heat sink) structure. the device incorporates a wsi (tungsten silicide) gate structure for high reliability. the NEZ1011-3E transistors are manufactured to nec's stringent quality assurance standards to ensure highest reli- ability and consistent superior performance. description note: 1. rg is the series resistance between the gate supply and the fet gate.
typical performance curves output power and efficiency vs. input power output power, p out (dbm) efficiency, add (%) input power, p in (dbm) symbols parameters units ratings v ds drain to source voltage v 15 v gs gate to source voltage v -7 i ds drain current a 3.0 i gf gate forward current ma +20 i gr gate reverse current ma -20 p t total power dissipation w 15 t ch channel temperature c 175 t stg storage temperature c -65 to +175 note: 1. operation in excess of any one of these parameters may result in permanent damage. absolute maximum ratings 1 (t a = 25 c unless otherwise noted) +35 +30 +25 +20 +25 +30 0 10 20 30 40 50 60 70 80 p out add test conditions: v ds = 10.0 v i ds = 0.7 a NEZ1011-3E
typical scattering parameters (t a = 25 c) frequency s 11 s 21 s 12 s 22 ghz mag ang mag ang mag ang mag ang 9.50 0.758 -167.39 2.070 -95.76 0.016 -38.87 0.646 -84.19 9.60 0.756 -178.08 2.270 -112.00 0.017 -61.60 0.622 -91.49 9.70 0.753 171.53 2.354 -124.08 0.017 -85.66 0.596 -98.42 9.80 0.747 160.11 2.443 -134.99 0.018 -111.75 0.566 -106.28 9.90 0.741 148.58 2.673 -151.69 0.021 -134.47 0.531 -114.98 10.0 0.729 136.70 2.724 -167.75 0.023 -166.06 0.491 -124.12 10.1 0.716 124.86 2.712 176.25 0.027 172.30 0.448 -134.07 10.2 0.699 112.55 2.838 161.63 0.030 148.72 0.407 -145.61 10.3 0.681 100.95 2.852 145.98 0.034 124.79 0.365 -158.26 10.4 0.663 89.42 2.871 130.97 0.039 108.58 0.320 -172.71 10.5 0.641 77.97 2.903 116.20 0.043 89.47 0.283 170.97 10.6 0.622 67.46 2.901 101.01 0.048 72.73 0.252 153.11 10.7 0.594 56.60 2.877 86.32 0.052 55.93 0.230 133.05 10.8 0.575 46.63 2.883 71.80 0.056 39.23 0.220 112.27 10.9 0.552 36.25 2.855 56.97 0.061 23.04 0.221 92.84 11.0 0.526 26.67 2.840 42.96 0.064 7.38 0.227 75.00 11.1 0.506 16.61 2.859 28.79 0.068 -5.91 0.236 58.65 11.2 0.477 6.70 2.845 14.13 0.072 -21.59 0.249 44.18 11.3 0.456 -3.13 2.827 0.09 0.074 -34.56 0.258 30.97 11.4 0.421 -13.55 2.874 -14.50 0.077 -47.80 0.266 19.24 11.5 0.394 -23.84 2.845 -29.76 0.082 -62.82 0.273 7.52 11.6 0.358 -36.37 2.814 -44.12 0.084 -76.49 0.273 -3.61 11.7 0.318 -48.90 2.828 -57.37 0.094 -91.32 0.270 -14.58 11.8 0.279 -64.30 2.845 -74.32 0.094 -106.79 0.264 -25.85 11.9 0.238 -83.35 2.802 -90.23 0.099 -122.49 0.253 -37.42 12.0 0.207 -106.26 2.794 -105.99 0.104 -137.25 0.238 -49.84 12.1 0.196 -137.80 2.770 -121.15 0.096 -154.08 0.217 -64.49 12.2 0.206 -166.81 2.602 -139.28 0.102 -169.14 0.195 -80.31 12.3 0.247 167.14 2.579 -153.95 0.097 177.26 0.170 -98.82 12.4 0.303 147.11 2.518 -167.66 0.095 161.79 0.151 -121.50 12.5 0.355 131.68 2.375 174.50 0.104 145.13 0.139 -147.03 12.6 0.412 118.32 2.236 158.17 0.096 132.63 0.143 -175.15 12.7 0.463 107.59 2.136 143.53 0.101 117.73 0.160 159.25 12.8 0.515 98.52 2.000 129.81 0.106 100.77 0.187 137.81 12.9 0.554 89.20 1.833 115.84 0.082 85.18 0.223 120.09 13.0 0.592 81.59 1.844 101.31 0.088 67.39 0.263 104.51 NEZ1011-3E v ds = 10 v, i ds = 0.7 ma marker 1. 10.7 ghz 2. 11.7 ghz 2.0 13 ghz 13 ghz 1.0 0.5 - 0.5 - 1.0 - 2.0 0 1 2 s22 9.5 ghz s11 9.5 ghz 2 1 +90 -90 +45 -45 +135 -135 +180 0 s12 9.5 ghz 13 ghz 13 ghz 1 2 1 2 s21 9.5 ghz NEZ1011-3E exclusive north american agent for rf, microwave & optoelectronic semiconductors california eastern laboratories ?headquarters ?4590 patrick henry drive ?santa clara, ca 95054-1817 ?(408) 988-3500 ?telex 34-6393 ?fax (408) 988-0279 24-hour fax-on-demand: 800-390-3232 (u.s. and canada only) ?internet: http://www.cel.com 7/99 data subject to change without notice
|
